100v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. features ? 55a, 100v, r ds(on) = 0.026 ? @v gs = 10 v ? low gate charge ( typical 75 nc) ? low crss ( typical 130 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter KSM55N10 units v dss drain-source voltage 100 v i d drain current - continuous (t c = 25c) 55 a - continuous (t c = 100c) 38.9 a i dm drain current - pulsed (note 1) 220 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 1100 mj i ar avalanche current (note 1) 55 a e ar repetitive avalanche energy (note 1) 15.5 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25c) 155 w - derate above 25c 1.03 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.97 c / w r cs thermal resistance, case-to-sink 0.5 -- c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w ! " ! ! ! " " " ! " ! ! ! " " " s d g to-220 KSM55N10 2014-6-29 1 www.kersemi.com
(note 4) (note 4, 5) (note 4, 5) (note 4) t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 0.55mh, i as = 55a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 55a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 100 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.1 -- v/c i dss zero gate voltage drain current v ds = 100 v, v gs = 0 v -- -- 1 a v ds = 80 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 25 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -25 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 27.5 a -- 0.021 0.026 ? g fs forward transconductance v ds = 40 v, i d = 27.5 a -- 38 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2100 2730 pf c oss output capacitance -- 640 830 pf c rss reverse transfer capacitance -- 130 170 pf switching characteristics t d(on) turn-on delay time v dd = 50 v, i d = 55 a, r g = 25 ? -- 25 60 ns t r turn-on rise time -- 250 510 ns t d(off) turn-off delay time -- 110 230 ns t f turn-off fall time -- 140 290 ns q g total gate charge v ds = 80 v, i d = 55 a, v gs = 10 v -- 75 98 nc q gs gate-source charge -- 13 -- nc q gd gate-drain charge -- 36 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 55 a i sm maximum pulsed drain-source diode forward current -- -- 220 a v sd drain-source diode forward voltage v gs = 0 v, i s = 55 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 55 a, di f / dt = 100 a/ s -- 100 -- ns q rr reverse recovery charge -- 380 -- nc electrical characteristics KSM55N10 2014-6-29 2 www.kersemi.com
0 1020304050607080 0 2 4 6 8 10 12 v ds = 50v v ds = 80v note : i d = 55a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 60 120 180 240 300 0.00 0.03 0.06 0.09 0.12 note : t j = 25 v gs = 20v v gs = 10v r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 10 2 175 25 -55 notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics KSM55N10 2014-6-29 3 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 0.97 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 27.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 KSM55N10 2014-6-29 4 www.kersemi.com
charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms KSM55N10 2014-6-29 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSM55N10 2014-6-29 6 www.kersemi.com
package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 KSM55N10 2014-6-29 7 www.kersemi.com
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